| No. | Partie # | Fabricant | Description | Fiche Technique |
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Microsemi Corporation |
NPN POWER SILICON TRANSISTOR = 0 VCE = 300 Vdc; IB = 0 Emitter-Base Cutoff Current VBE = 10 Vdc; IC = 0 2N3846 2N3847 2N3846 2N3847 2N3846 2N3847 V(BR)CEO 200 300 2 2 5 5 250 Vdc ICES mAdc ICEO IEBO mAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 |
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Microsemi Corporation |
(2N3846 / 2N3847) NPN POWER SILICON TRANSISTOR rrent VCE = 200 Vdc; IB = 0 VCE = 300 Vdc; IB = 0 Emitter-Base Cutoff Current VBE = 10 Vdc; IC = 0 2N3846 2N3847 2N3846 2N3847 2N3846 2N3847 V(BR)CEO 200 300 2 2 5 5 250 Vdc ICES mAdc ICEO IEBO mAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-4 |
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Microsemi Corporation |
(2N3846 / 2N3847) NPN POWER SILICON TRANSISTOR rrent VCE = 200 Vdc; IB = 0 VCE = 300 Vdc; IB = 0 Emitter-Base Cutoff Current VBE = 10 Vdc; IC = 0 2N3846 2N3847 2N3846 2N3847 2N3846 2N3847 V(BR)CEO 200 300 2 2 5 5 250 Vdc ICES mAdc ICEO IEBO mAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-4 |
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