2N3634 डाटा शीट PDF( Datasheet )

TECHNICAL DATA PNP SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637L Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings

Type 2N3634 Geometry TBD Polarity PNP Qual Level: Pending Features: • General-purpose low-power amplifier transistor which operates over a wide temperature range. • Housed in a TO-39 case. • Also will be

SILICON PNP TRANSISTOR 2N3634 • General Purpose PNP Silicon Transistor • High Voltage, High Speed Saturated Switching • Low Power Amplifier Applications • Hermetic TO39 Package • Screening Options Ava

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation T/ = 25°C Derate above 25°C @Total Device Dissipation Tc

2N3634 2N3635 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3634 and 2N3635 are silicon PNP epitaxial planar transistors designed for general purpose swi

2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon Features • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC MAXIMUM RATINGS

2N3634CSM MECHANICAL DATA Dimensions in mm (inches) 0.51 ± 0.10 (0.02 ± 0.004) 3 0.31 (0.012) rad. 2.54 ± 0.13 (0.10 ± 0.005) 0.76 ± 0.15 (0.03 ± 0.006) 21 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.1