डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2N341 | N-P-N GROWN SILICON TRANSISTORS Free Datasheet http://www.datasheet4u.com/
|
New Jersey Semi-Conductor |
|
2N3410DCSM | Dual Bipolar NPN Devices 2N3410DCSM
Dimensions in mm (inches).
2.29 ± 0.20 (0.09 ± 0.008)
1.65 ± 0.13 (0.065 ± 0.005)
1.40 ± 0.15 (0.055 ± 0.006)
0.64 ± 0.06 (0.025 ± 0.003)
Dual Bipolar NPN Devices in a hermetically seal |
Semelab Plc |
|
2N3414 | NPN SILICON TRANSISTOR |
Micro Electronics |
|
2N3414 | NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
www.DataSheet4U.com
|
Central Semiconductor |
|
2N3415 | NPN General Purpose Amplifier 2N3415
Discrete POWER & Signal Technologies
2N3415
E
CB
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 m |
Fairchild Semiconductor |
|
2N3415 | NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
www.DataSheet4U.com
|
Central Semiconductor |
|
2N3415 | Silicon NPN Transistor 2N3415 Silicon NPN Transistor General Purpose Amplifier TO−92 Type Package
Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . |
NTE |
www.DataSheet.in | 2017 | संपर्क |