2N170 डाटा शीट PDF( Datasheet )

6 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=60V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power am

2N 1692, 2N 1693 For Specifications, See 2N1561 Data. 2N1705 thru 2N1707 (GERMANIUM) PNP germanium transistors for audio driver applications in transistorized radio receivers. CASE 31(1) (TO-S) Base connecte

2N 1692, 2N 1693 For Specifications, See 2N1561 Data. 2N1705 thru 2N1707 (GERMANIUM) PNP germanium transistors for audio driver applications in transistorized radio receivers. CASE 31(1) (TO-S) Base connecte

2N 1692, 2N 1693 For Specifications, See 2N1561 Data. 2N1705 thru 2N1707 (GERMANIUM) PNP germanium transistors for audio driver applications in transistorized radio receivers. CASE 31(1) (TO-S) Base connecte

17082N (SILICON) CASE 26 (TO-.oI6) Collector electrically connected to case NPN silicon transistor designed for very highspeed, low-power saturated switching applications for computers in military and indu