डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
28C64 | 64K 8K x 8 CMOS E2PROM Features
• Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle
– Internal Address and Data Latches – Internal Control Timer – Automatic Clear Before |
ATMEL |
|
28C64 | E2PROM X28C64
64K
X28C64
8K x 8 Bit
5 Volt, Byte Alterable E2PROM
FEATURES
• 150ns Access Time • Simple Byte and Page Write
—Single 5V Supply —No External High Voltages or VPP Control Circuits
—Self-Tim |
Xicor |
|
28C64A | 64K CMOS EEPROM Obsolete Device
28C64A
64K (8K x 8) CMOS EEPROM
FEATURES
• Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation
- 30 mA Active - 100 µA Standby • Fast Byte Write Time—200 µs or |
Microchip Technology |
|
28C64A | High Speed CMOS 64K EEPROM Turbo IC, Inc.
28C64A
HIGH SPEED CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
FEATURES: • 120 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and A |
Turbo IC |
|
28C64B | Parallel EEPROM Features
• Fast Read Access Time – 150 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times
– Page Write Cycle Time: 10 ms Maximum (Standard) |
ATMEL |
|
28C64B | 64K-Bit CMOS PARALLEL EEPROM CAT28C64B
64K-Bit CMOS PARALLEL EEPROM
FEATURES
I Fast read access times: – 90/120/150ns
I Low power CMOS dissipation: – Active: 25 mA max. – Standby: 100 µA max.
I Simple write operation: – On-chip ad |
Catalyst |
|
28C64B | 64K CMOS EEPROM Features
• Fast Read Access Time – 150 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times
– Page Write Cycle Time: 10 ms Maximum (Standard) |
Microchip Technology |
www.DataSheet.in | 2017 | संपर्क |