2301 डाटा शीट PDF( Datasheet )

2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is s

†RoHS COMPLIANT High Current Toroid Inductors Special Features • DC/DC converter, EMI filter applications • Low radiation • Low core loss • High current capacity • Horizontal or vertical mount �