डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1SV281 | VARIABLE CAACITANCE DIODE TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV281
1SV281
VCO for V/UHF Band Radio
• High capacitance ratio: C1 V/C4 V = 2.0 (typ.) • Low series resistance: rs = 0.28 Ω (typ.) • |
Toshiba Semiconductor |
|
1SV283 | VARIABLE CAPCCITANCE DIODE | Toshiba Semiconductor |
|
1SV285 | Variable Capacitance Diode | Toshiba Semiconductor |
|
1SV280 | Variable Capacitance Diode | Toshiba Semiconductor |
|
1SV287 | Variable Capacitance Diode | Toshiba Semiconductor |
|
1SV288 | Variable Capacitance Diode | Toshiba Semiconductor |
|
1SV282 | Variable Capacitance Diode | Toshiba Semiconductor |
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1SV281 | VARIABLE CAACITANCE DIODE | Toshiba Semiconductor |
|
1SV286 | Variable Capacitance Diode | Toshiba Semiconductor |
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1SV284 | Variable Capacitance Diode | Toshiba Semiconductor |
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