डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1SS424 | Silicon Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS424
High-Speed Switching Applications
z Low forward voltage
: VF (3) = 0.50 V (typ.)
1SS424
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Character |
Toshiba |
|
1SS426 | Silicon Diode | Toshiba |
|
1SS422 | Silicon Diode | Toshiba |
|
1SS423 | Silicon Diode | Toshiba |
|
1SS420 | Silicon Diode | Toshiba |
|
1SS422 | High speed Switching Diode | GME |
|
1SS421 | Silicon Diode | Toshiba |
|
1SS422 | High Speed Switching Diode | MDD |
|
1SS422 | DIODE | WEJ |
|
1SS422 | High Speed Switching Diodes | Kexin |
|
1SS422 | SURFACE MOUNT FAST SWITCHING DIODE | WON-TOP |
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