डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1SS419 | Silicon Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS419
High-Speed Switching Applications
1SS419
Unit: mm
CATHODE MARK
• Small package • Low forward voltage: VF (3) = 0.56 V (typ.) • Low reverse c |
Toshiba |
|
1SS413CT | Schottky Barrier Diode | Toshiba |
|
1SS412 | Silicon Diode | Toshiba |
|
1SS417 | Silicon Diode | Toshiba |
|
1SS413 | Schottky Barrier Diode | Toshiba |
|
1SS413 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE | SEMTECH |
|
1SS419 | Silicon Diode | Toshiba |
|
1SS417TM | HIGH SPEED SWITCHING DIODE | Pan Jit International |
|
1SS41 | Switching Diode | Rohm |
|
1SS418 | Silicon Diode | Toshiba |
|
1SS416 | Silicon Diode | Toshiba |
www.DataSheet.in | 2017 | संपर्क |