1SS41 डाटा शीट PDF( Datasheet )

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications 1SS412 Unit: imm z Low forward voltage z Low reverse current z Small total capacitance z Small package : VF = 1.0 V (

1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 Q Top View Marking Code: "Q" Simplified outline SOD-523 and symbol Absolute

Schottky Barrier Diode Silicon Epitaxial 1SS413 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit SOD-923 fSC 1SS413 1: Cathode 2: Anode 1: Cathode 2: Anode Start of commercial produc

Schottky Barrier Diode Silicon Epitaxial 1SS413CT 1. Applications • High-Speed Switching 2. Features (1) Low forward voltage : VF(3) = 0.50 V (typ.) (2) Low reverse current : IR = 0.5 µA (max) (3) Small tota

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416 1SS416 High Speed Switching Application z Small package z Low forward voltage: VF = 0.23V (typ.) @IF = 5mA 0.1 0.6±0.05 Unit: mm A CATHODE MAR

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT 1SS416CT High Speed Switching Application z Small package z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA 0.6±0.05 Unit: mm CATHODE MARK