1SS357 डाटा शीट PDF( Datasheet )

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching z Low forward voltage z Low reverse current z Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC-70 1SS

1SS357 Schottky Diodes FEATURES z Small Package z Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak reverse voltage DC reverse voltage Mean recti

1SS357 SCHOTTKY DIODE FEATURES * Small Package * Low VF ,low IR MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: A

Surface Mount Schottky Barrier Diode P b Lead(Pb)-Free Features: * Low Forward Voltage : VF = 0.28(Typ.) @ IF = 1mA * Low Reverse Current : IR = 5µA(Max.) * Small outline Surface mount SOD-323 Package Mechanic

1SS357 Surface Mounting Schottky Diode SOD-323 Features — Small Surface Mounting Type: SOD-323 — Low VF。 — Low IR Applications — Surface mount schottky diode Ordering Information Type No. 1SS357 Markin

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-,$1*68 &+$1*-,$1* (/(&7521,&6 7(&+12/2*< &2 /7' 62' 3ODVWLF(QFDSVXODWH 'LRGHV 1SS357 Schottky Barrier Diode )($785(6 z Low current rectifier schottky diode z Low voltage, low inductance z For power sup