डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1SS321 | Diode www.DataSheet.co.kr
1SS321
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS321
Unit: mm
Low Voltage High Speed Switching
z Low forward voltage z Low reverse current z Small package : VF = 0.42V (typ.) : IR = |
Toshiba Semiconductor |
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1SS321 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE www.DataSheet.co.kr
1SS321
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
For low voltage high speed switching application
3
Features • Low forward voltage • Low reverse current
1
2
Marking Code: "ZC" SOT-23 P |
SEMTECH ELECTRONICS |
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1SS321 | LOW VOLTAGE HIGH SPEED SWITCHING www.DataSheet.co.kr
SMD Type
LOW VOLTAGE HIGH SPEED SWITCHING 1SS321
Diodes
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
+0.1 2.4-0.1
Low forward voltage: Low reverse current:
VF = 0.42 V(Typ) IR =500 nA(Ma |
Guangdong Kexin Industrial |
www.DataSheet.in | 2017 | संपर्क |