1N62 डाटा शीट PDF( Datasheet )

1N62 Germanium Diode General Purpose Features: D Low Forward Voltage Drop D Low Power Consumption D Very Low Noise Level Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Peak Inverse Voltag

® 1N 6263 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and

1N6263 SCHOTTKY BARRIER SWITCHING DIODE Features · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance A B A Mechanical Data · ·

1N5711 and 1N6263 Schottky Diodes DO-204AH (DO-35 Glass) Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forw

BL GALAXY ELECTRICAL SMALL SIGNAL SCHOTTKY DIODE FEATURES For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and