1N5825 डाटा शीट PDF( Datasheet )

lN5823, lN5824, lN5825 (SILICON) Designers Data Sheet HOT CARRIER POWER RECTIFIERS emploYing the Schottky Barner pnnclple In a large area metaHo-slllcon power diode State of the art geometry features epitaxi

® MOTOROLA IN5823,lN5824 IN5825 MBRS82S,H, H1 Designers Data Sheet HOT CARRIER POWER RECTIFIERS · .. employing the Schottky Barrier principle in a large area metal- to-silicon power diode. State-of-the-a

1N5823 - 1N5825 SCHOTTKY BARRIER RECTIFIER DIODE VOLTAGE RANGE: 20 - 40V CURRENT: 5.0 A Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability !

1N5823 ,1N5824 ,1N5825 1N5823 and 1N5825 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art g

Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = 8.3 ms Max.