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1N5824 | HOT CARRIER POWER RECTIFIERS lN5823, lN5824, lN5825 (SILICON)
Designers Data Sheet
HOT CARRIER POWER RECTIFIERS
emploYing the Schottky Barner pnnclple In a large area metaHo-slllcon power diode State of the art geometry features epitaxi |
ETC |
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1N5824 | 5Amp Schottky Rectifier |
Microsemi |
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1N5824 | POWER RECTIFIERS ® MOTOROLA
IN5823,lN5824 IN5825
MBRS82S,H, H1
Designers Data Sheet
HOT CARRIER POWER RECTIFIERS
· .. employing the Schottky Barrier principle in a large area metal-
to-silicon power diode. State-of-the-a |
Motorola |
|
1N5824 | SCHOTTKY BARRIER RECTIFIER DIODE 1N5823 - 1N5825
SCHOTTKY BARRIER RECTIFIER DIODE
VOLTAGE RANGE: 20 - 40V
CURRENT: 5.0 A
Features
! Schottky Barrier Chip
! Guard Ring Die Construction for
Transient Protection ! High Current Capability ! |
SunMate |
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1N5824 | Axial Lead Rectifiers 1N5823 ,1N5824 ,1N5825
1N5823 and 1N5825 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art g |
ON Semiconductor |
|
1N5824G | DIODE Technical Data DIODE
maximum ratings
Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = 8.3 ms Max. |
DSI |
www.DataSheet.in | 2017 | संपर्क |