डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
1N5713 | General Purpose Schottky Diodes General Purpose Schottky Diodes
FEATURES
Fast switching-PSEC High breakdown voltage Low cost - H-P equivalents
ENVIRONMENTAL RATINGS
(Maximum) Operating Temperature. - - - - - - - -65°C to+200°C Storage Temp |
M-Pulse Microwave |
|
1N5711 | SMALL SIGNAL SCHOTTKY DIODE | STMicroelectronics |
|
1N5711 | SCHOTTKY BARRIER SWITCHING DIODE | Diodes Incorporated |
|
1N5711 | Schottky Diodes | Vishay |
|
1N5711 | Schottky Barrier Diodes | Avago |
|
1N5711UB | SCHOTTKY BARRIER DIODES | Microsemi |
|
1N5711WS | SURFACE MOUNT SCHOTTKY BARRIER DIODE | Diodes Incorporated |
|
1N5711W | SURFACE MOUNT SCHOTTKY BARRIER DIODE | Diodes Incorporated |
|
1N5719 | SILICON PIN DIODE | Advanced Semiconductor |
|
1N5711 | SCHOTTKY BARRIER DIODES | Microsemi Corporation |
|
1N5713 | General Purpose Schottky Diodes | M-Pulse Microwave |
www.DataSheet.in | 2017 | संपर्क |