| No. | Partie # | Fabricant | Description | Fiche Technique |
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Comset Semiconductor |
NPN SILICON TRANSISTORS 8A, 185T2A BDY28B, 185T2B BDY28C, 185T2C BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26 BDY27 BDY28 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 BDY26, 183T2 BDY27, 184T2 BDY28, 185T2 Min 180 200 250 250 220 300 400 500 15 30 75 10 - Typ MAx Unit 55 65 90 |
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DSI |
TRANSISTOR 0 µs 11. tOFF IC = 5.0 A, IB = 1.0 A - 6.0 µs 12. 13. 14. 15. 16. 17. 18. 19. 20. Notes (1)pulse-tested tp ≤ 300 µs, duty cycle ≤ 2 % empty empty empty DIMENSIONS in mm Marking 185T2B Customer GENERAL PURPOSE |
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DSI |
TRANSISTOR .0 µs 11. tOFF IC = 5.0 A, IB = 1.0 A - 6.0 µs 12. 13. 14. 15. 16. 17. 18. 19. 20. Notes (1)pulse-tested tp ≤ 300 µs, duty cycle ≤ 2 % empty empty empty DIMENSIONS in mm Marking 185T2C Customer GENERAL PURPOSE |
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