180N10 डाटा शीट PDF( Datasheet )

HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Single MOSFET Die IXFR 180N10 VDSS = 100 V ID25 = 165 A RDS(on) = 8 mW trr £ 250 ns Preliminary data Symbol VDSS V DGR VGS V GSM I

NDPL180N10B Power MOSFET 100V, 3.0mΩ, 180A, N-Channel Features  Ultra Low On-Resistance  Low Gate Charge  High Speed Switching  100% Avalanche Test  Pb-Free and RoHS compliance Specifications

TAB 23 1 H2PAK-2 D(TAB) G(1) STH180N10F3-2 Datasheet N‑channel 100 V, 3.9 mΩ typ., 180 A STripFET F3 Power MOSFET in H²PAK‑2 package Features Order code VDS STH180N10F3-2 100 V • Ultra low on-res

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