10N65 डाटा शीट PDF( Datasheet )

10N65(F,B,H) 10A mps,650 Volts N-CHANNEL MOSFET FEATURE  10A,650V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-

10N65 650V N-Channel MOSFET. General Description ShenZhen LuGuang Electronic Technology. Co., Ltd. Awarded ISO9001:2015; ISO14001:2015; IATF16949:2016; Email:[email protected] Web: www.lgesemi.com Tel: 0086-

UNISONIC TECHNOLOGIES CO., LTD 10N65 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switchi

R SEMICONDUCTOR FEATURES ● RDS(ON)<1.0Ω @ VGS=10V ● Fast switching capability ● Low gate charge ● Lead free in compliance with EU RoHS directive. MECHANICAL DATA ● Case:TO-220,ITO-220,TO-262,TO-263 P

UNISONIC TECHNOLOGIES CO., LTD 10N65-C Preliminary 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65-C is a high voltage and high current power MOSFET, designed to have better characteristics,

UNISONIC TECHNOLOGIES CO., LTD 10N65-Q 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65-Q is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state res

10N65(F,B,H) 10A mps,650 Volts N-CHANNEL MOSFET FEATURE  10A,650V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-