| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon |
Power Transistor • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitance |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitance |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.9Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High peak current capability ·Ultra lo |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitance |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC for target applications Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ 800 V 0.9 W 31 nC • Pb-free lead plating; |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤0.9Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25 |
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