VBZR2N7000 Datasheet. en stock, prix

Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

VBZR2N7000 N-Channel MOSFET

Features

• Halogen-free According to IEC 61249-2-21 Definition
• Low On-Resistance: 2 Ω
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 25 pF
• Fast Switching Speed: 25 ns
• Low Input and Output Leakage
• TrenchFET® Power MOSFET
• 1200V ESD Protection
• Compliant to RoHS Directive 2002/95/EC BENEFITS
• Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage APPLICATIONS
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays.

VBZR2N7000 VBsemi Datasheet
PDF 266.31KB

VBZR2N7000 N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2 at VGS = 10 V ID (mA) 300 TO-92 D 1 G 2 S 3 Top View FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Ou.

Distributor	Stock	Price	Buy

Similar Product

No.	Partie #	Fabricant	Description
1	VBZ84	VBsemi	P-Channel MOSFET
2	VBZC8822	VBsemi	Dual N-Channel MOSFET
3	VBZE10N65S	VBsemi	N-Channel Power MOSFET
4	VBZE20N06	VBsemi	N-Channel MOSFET
5	VBZE4N60	VBsemi	N-Channel MOSFET
6	VBZE50N04	VBsemi	N-Channel MOSFET
7	VBZF4N60	VBsemi	N-Channel Power MOSFET
8	VBZFB40N06	VBsemi	N-Channel MOSFET
9	VBZL30N06	VBsemi	N-Channel MOSFET
10	VBZM60N06	VBsemi	N-Channel MOSFET
11	VB024	STMicroelectronics	HIGH VOLTAGE IGNITION COIL DRIVER POWER IC
12	VB025BSP	STMicroelectronics	HIGH VOLTAGE IGNITION COIL DRIVER POWER IC

More datasheet from VBsemi

Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact)