VBZE10N65S Datasheet. en stock, prix

Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

VBZE10N65S N-Channel Power MOSFET

Features

• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS) APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
• Industrial D TO-252 GDS Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) P.

VBZE10N65S VBsemi Datasheet
PDF 273.27KB

VBZE10N65S www.VBsemi.com N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 38 4 4.2 Single 0.42 FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charg.

Distributor	Stock	Price	Buy

Similar Product

No.	Partie #	Fabricant	Description
1	VBZE20N06	VBsemi	N-Channel MOSFET
2	VBZE4N60	VBsemi	N-Channel MOSFET
3	VBZE50N04	VBsemi	N-Channel MOSFET
4	VBZ84	VBsemi	P-Channel MOSFET
5	VBZC8822	VBsemi	Dual N-Channel MOSFET
6	VBZF4N60	VBsemi	N-Channel Power MOSFET
7	VBZFB40N06	VBsemi	N-Channel MOSFET
8	VBZL30N06	VBsemi	N-Channel MOSFET
9	VBZM60N06	VBsemi	N-Channel MOSFET
10	VBZR2N7000	VBsemi	N-Channel MOSFET
11	VB024	STMicroelectronics	HIGH VOLTAGE IGNITION COIL DRIVER POWER IC
12	VB025BSP	STMicroelectronics	HIGH VOLTAGE IGNITION COIL DRIVER POWER IC

More datasheet from VBsemi

Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact)