VBQF2205 Datasheet. en stock, prix


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VBQF2205 P-Channel MOSFET

Features
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Load Switch
• Adaptor/Battery Switch S Top View 1 8 2 7 3 6 4 5 G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS - 20 V VGS ± 16 TC = 25 °C - 52 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID - 40g - 26b, c TA = 70 °C - 21b, c A Pulsed Drain Current IDM - 150 Continuous Source-Drain Dio.


VBQF2205 VBsemi Datasheet
PDF 295.07KB
VBQF2205  VBQF2205  VBQF2205
VBQF2205 P-Channel 20-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 0.0040 at VGS = 10 V 0.0060 at VGS = 4.5 V ID (A) - 52 - 40 Qg (Typ.) 21.5 nC DFN 3x3 EP Top View Bottom View Pin 1 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive.



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