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AO3402 N-Channel MOSFET
Features
The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications.
Plastic-Encapsulate Mosfets
AO3402
N-Channel MOSFET
D
G S
1.Gate 2.Source 3.Drain
SOT-23
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current A
TA=25°C T =70°C
Pulsed Drain Current B
Power Dissipation A
TA=25°C TA=70°C
Junction and Storage Temperature Range
VDS VGS
ID IDM PD
TJ, TSTG
Maximum
.
FEATURES
The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications.
Plastic-Encapsulate Mosfets
AO3402
N-Channel MOSFET
D
G S
1.Gate 2.Source 3.Drain
SOT-23
Absolute Maximum Ratings (TA=25oC, unless otherwise note.
The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3402L( Green Product ) is offered in a lead-free package.
Features
VDS (V) = 30V ID = 4 A RDS(ON) < 55mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) R.
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