डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
YZ21 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= 2A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min) ·Minimum Lot-to-Lot variations for robu |
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YZ21D | NPN Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 500(Min)@ IC= 2A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 110V(Min)
APPLICATIONS ·Designed for general pur |
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