XP162A12A6PR डाटा शीट PDF( Datasheet )

P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.17 Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 89 Package Applications Notebook PCs Cellular and portable phones On

XP162A12A6PR-G Power MOSFET ETR11026-004 ■GENERAL DESCRIPTION The XP162A12A6PR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed swi