WTC2306 डाटा शीट PDF( Datasheet )

WTC2306 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 5.8 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 2 SOURCE Features: * Super High Dense Cell Design For Low RDS(on) RDS

WTC2306 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 5.8 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 2 SOURCE Features: * Super High Dense Cell Design For Low RDS(on) RDS

WTC2306A N-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT 5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE www.DataSheet4U.com Features: SOURCE 2 3 1 2 *Super High Dense Cell Design For Low