WTC2305 डाटा शीट PDF( Datasheet )

WTC2305 P-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE Features: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω @V GS =10V

WTC2305 P-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE Features: *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <70m Ω @V GS =10V

WTC2305A P-Channel Enhancement Mode Power MOSFET 1 GATE SOURCE 3 DRAIN DRAIN CURRENT -3.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 2 www.DataSheet4U.com Features: *Super High Dense Cell Design For Low R DS