डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
WFJ8N65B | Power MOSFET Features
� 7.5A,650V,RDS(on)(Max1.3Ω )@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Tempe |
Winsemi |
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WFJ8N65B | Power MOSFET | Winsemi |
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