डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
WFF4N60 | Silicon N-Channel MOSFET Features
� 4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 16nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(VISO=4000V AC) � Maximum Junction Temperat |
Winsemi |
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WFF4N60 | N-Channel MOSFET Wisdom Semiconductor
WFF4N60
N-Channel MOSFET
Features
■ ■
RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temp |
Wisdom technologies |
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WFF4N60C | Silicon N-Channel MOSFET Features
� 4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 16nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(VISO=4000V AC) � Maximum Junction Temperat |
Winsemi |
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