डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
VN0610LL | TMOS FET Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
TMOS FET Transistor
N–Channel — Enhancement
3DRAIN VN0610LL
2 GATE
MAXIMUM RATINGS
®
1 SOURCE
Rating
Symbol
Value
Unit
Drain – Source Voltage
Drain – Gate |
Motorola |
|
VN0610LL | N-Channel Enhancement-Mode MOS Transistors www.DataSheet4U.com
VN0610LL, VN10LM N-Channel Enhancement-Mode MOS Transistors
VN0610LL / VN10LM
FEATURES
CORPORATION
• Low rDS(on) <5Ω • Switching • Amplification
PIN CONNECTIONS
ORDERING INFORMAT |
Calogic LLC |
|
VN0610LL | N-Channel MOSFET VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
N-Channel 60-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
VN10LLS VN0605T VN0610LL VN2222LL
V(BR)DSS Min (V)
60
rDS(on) Max (W)
5 @ VGS = 10 V 5 @ VGS = |
Vishay Siliconix |
|
VN0610LL | FET Transistor VN0610LL
FET Transistor
N−Channel — Enhancement
MAXIMUM RATINGS
Rating
Drain −Source Voltage
Drain −Gate Voltage (RGS = 1 MΩ)
Gate −Source Voltage − Continuous − Non−repetitive (tp ≤ 50 μs |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |