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VBT1045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier New Product
VBT1045C
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.34 V at IF = 2.5 A
TMBS ®
TO-263AB
FEATURES
• Trench MOS Schottky technology • L |
Vishay |
|
VBT1045C-E3 | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
VBT1045C-E3
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.34 V at IF = 2.5 A
TMBS ®
TO-263AB
K
2 1
FEATURES
• Trench MOS Schottky tec |
Vishay |
|
VBT1045CBP | Trench MOS Barrier Schottky Rectifier Rectifier www.DataSheet.co.kr
New Product
VBT1045CBP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.34 V at IF = 2.5 A
TMBS ®
TO-263AB
FEATURE |
Vishay |
|
VBT1045CBP-M3 | Trench MOS Barrier Schottky Rectifier www.vishay.com
VBT1045CBP-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.34 V at IF = 2.5 A
TMBS ®
TO-263AB
K
2 1
VBT1045CBP
PI |
Vishay |
www.DataSheet.in | 2017 | संपर्क |