डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
VB20120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier New Product
V20120C, VF20120C, VB20120C & VI20120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
TMBS ®
TO-220AB ITO-220AB
FEATURES |
Vishay |
|
VB20120C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
TO-220AB
TMBS ®
ITO |
Vishay |
|
VB20120C-M3 | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
VB20120C-M3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
TMBS ®
D2PAK (TO-263AB) K
2
1 VB20120C
PIN 1
K
PIN 2
H |
Vishay |
www.DataSheet.in | 2017 | संपर्क |