डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
VB10170C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
VB10170C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.57 V at IF = 2.5 A
TMBS ®
TO-263AB
K
2 1
FEATURES
• Trench MOS Schottky techn |
Vishay |
|
VB10170C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
VB10170C-E3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.57 V at IF = 2.5 A
TMBS ®
TO-263AB
K
2 1
FEATURES
• Trench MOS Schottky te |
Vishay |
|
VB10170C-M3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier VB10170C-E3, VB10170C-M3, VB10170CHM3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.57 V at IF = 2.5 A
TMBS ®
TO-263AB
K
2 1
VB10170 |
Vishay |
|
VB10170CHM3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier VB10170C-E3, VB10170C-M3, VB10170CHM3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.57 V at IF = 2.5 A
TMBS ®
TO-263AB
K
2 1
VB10170 |
Vishay |
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