| No. | Partie # | Fabricant | Description | Fiche Technique |
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CEL |
Si LD MOS POWER AMPLIFIER • MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz • ON CHIP OUTPUT POWER CONTROL FUNCTION • SINGLE SUPPLY VOLTAGE: VDS = 3.0 V TYP • PACKAGED IN 8 PIN L2MM (2.0 X 2.2 X 0.5mm) SUITABLE FOR HIGH- DENSITY SURFACE MOUNT DESCRIPTION N |
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NEC |
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT • Output Power : Pout = +21 dBm MIN. @Pin = −5 dBm, f = 1.9 GHz, VDS = 3.0 V : Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V • Single Supply voltage : VDS = 3.0 V TYP. • Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) su |
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