| No. | Partie # | Fabricant | Description | Fiche Technique |
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NEC |
SWITCHING N- AND P-CHANNEL POWER MOS FET • Low on-state resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 15.1 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A) • Low Ciss: Ciss = 900 pF TYP. (VDS = 10 V, VGS = 0 V) • Small and surface mount package (Power HSOP8) 1 5.2 +0.17 –0.2 4 6 |
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