TXDV812 डाटा शीट PDF( Datasheet )

Features ■ On-state current (IT(RMS)): 12 A ■ Max. blocking voltage (VDRM/VRRM): 1200 V ■ Gate current (IGT): 100 mA ■ Commutation @ 10 V/µs: up to 42.5 A/ms ■ Noise immunity: 2 kV/µs ■ Insulated

isc Thyristors INCHANGE Semiconductor TXDV812 DESCRIPTION ·With TO-220 packaging ·High operating junction temperature ·Very high commutation performancemaximized at each gate sensitivity ·Minimum Lot-to-L