TTC3710B डाटा शीट PDF( Datasheet )

Bipolar Transistors Silicon NPN Epitaxial Type TTC3710B TTC3710B 1. Applications • High-Current Switching 2. Features (1) Low collector-emitter saturation voltage: VCE(sat) = 0.4 V (max) (IC = 6 A , IB = 0.

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Complement to Type TTA1452B ·Minimum Lot-to-Lot variations for robust device performance and rel