डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TSM060N03 | N-Channel Power MOSFET TSM060N03
Taiwan Semiconductor
N-Channel Power MOSFET
30V, 60A, 6mΩ
FEATURES
● 100% avalanche tested ● Fast switching ● Pb-free plating ● RoHS compliant ● Halogen-free mold compound
APPLICATION
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Taiwan Semiconductor |
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TSM060N03CP | N-Channel Power MOSFET TSM060N03CP
30V N-Channel Power MOSFET
TO-252 (DPAK)
Pin Definition: 1. Gate 2. Drain 3. Source
Key Parameter Performance
Parameter
Value
VDS
RDS(on) (max)
VGS = 10V VGS = 4.5V
30 6 9
Qg 11.1
Unit V |
Taiwan Semiconductor |
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TSM060N03ECP | N-Channel Power MOSFET TSM060N03ECP
30V N-Channel Power MOSFET
TO-252 (DPAK)
Pin Definition: 1. Gate 2. Drain 3. Source
Key Parameter Performance
Parameter
Value
VDS
RDS(on) (max)
VGS = 10V VGS = 4.5V
30 6 9
Qg 11.1
Unit V |
Taiwan Semiconductor |
www.DataSheet.in | 2017 | संपर्क |