| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Truesemi |
N-Channel MOSFET • 850V @TJ = 150 ℃ • Typ. RDS(on) = 0.21Ω • Ultra Low gate charge (typ. Qg = 27.5nC) • 100% avalanche tested TO-247 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC |
|