डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TSF20H120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier creat by ART
TSF20H120C
Taiwan Semiconductor
FEATURES
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
- Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low f |
Taiwan Semiconductor |
|
TSF20H120C | Trench MOS Barrier Schottky Rectifier TSF20H100C thru TSF20H150C
Taiwan Semiconductor
Trench MOS Barrier Schottky Rectifier
FEATURES
- Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - L |
Taiwan Semiconductor |
www.DataSheet.in | 2017 | संपर्क |