TK4P60DB डाटा शीट PDF( Datasheet )

iscN-Channel MOSFET Transistor TK4P60DB ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 2Ω (MAX) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-

MOSFETs Silicon N-Channel MOS (π-MOS) TK4P60DB 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance : RDS(ON) = 1.6 Ω (typ.) (2) High forward transfer admittance