TK4P50D डाटा शीट PDF( Datasheet )

iscN-Channel MOSFET Transistor TK4P50D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 2Ω (MAX) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-L

MOSFETs Silicon N-Channel MOS (π-MOS) TK4P50D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance : RDS(ON) = 1.7 Ω (typ.) (2) High forward transfer admittance

iscN-Channel MOSFET Transistor TK4P50DA ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 2.45mΩ (MAX) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot