डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TK35E08N1 | Silicon N-Channel MOSFET TK35E08N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK35E08N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10 V) |
Toshiba Semiconductor |
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TK35E08N1 | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
TK35E08N1,ITK35E08N1
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤12.2mΩ. (VGS = 10 V) ·Enhancement mode:
Vth =2.0 to 4.0V (VDS = 10 V, I |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |