डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TK31J60W | Silicon N-Channel MOSFET TK31J60W
MOSFETs Silicon N-Channel MOS (DTMOS)
TK31J60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super |
Toshiba |
|
TK31J60W | N-Channel MOSFET isc N-Channel MOSFET Transistor
TK31J60W
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤0.088Ω. ·Enhancement mode:
Vth =2.7 to 3.7V (VDS = 10 V, ID=15.4A) ·100% avalanche tested ·Minimum Lot-to- |
INCHANGE |
|
TK31J60W5 | Silicon N-Channel MOSFET TK31J60W5
MOSFETs Silicon N-Channel MOS (DTMOS)
TK31J60W5
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) (4) Fast reverse recovery time: trr = 135 ns (typ.) Low drain-source on-re |
Toshiba Semiconductor |
|
TK31J60W5 | N-Channel MOSFET isc N-Channel MOSFET Transistor
TK31J60W5
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤0.099Ω. ·Enhancement mode:
Vth =3 to4.5V (VDS = 10 V, ID=15.4A) ·100% avalanche tested ·Minimum Lot-to-Lo |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |