डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TK16N60W | N-Channel MOSFET MOSFETs Silicon N-Channel MOS (DTMOS)
TK16N60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : |
Toshiba Semiconductor |
|
TK16N60W | N-Channel MOSFET isc N-Channel MOSFET Transistor
TK16N60W
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤0.19Ω. ·Enhancement mode:
Vth =2.7 to 3.7V (VDS = 10 V, ID=0.79mA) ·100% avalanche tested ·Minimum Lot-to- |
INCHANGE |
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TK16N60W5 | Silicon N-Channel MOSFET TK16N60W5
MOSFETs Silicon N-Channel MOS (DTMOS)
TK16N60W5
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) (4) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-re |
Toshiba Semiconductor |
|
TK16N60W5 | N-Channel MOSFET isc N-Channel MOSFET Transistor
TK16N60W5
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤0.23Ω. ·Enhancement mode:
Vth =3.0 to 4.5V (VDS = 10 V, ID=0.79mA) ·100% avalanche tested ·Minimum Lot-to |
INCHANGE |
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