डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TK150E09NE | MOSFET TK150E09NE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅧ-H)
TK150E09NE
E-Bike
Low drain−source ON resistance : RDS (ON) = 3.6 mΩ (typ.) (VGS = 10 V)
Low leakage curre |
Toshiba Semiconductor |
|
TK150E09NE | MOSFET | Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |