TK10A60D डाटा शीट PDF( Datasheet )

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Unit: mm • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) H

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK10A60D，ITK10A60D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.58Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·

MOSFETs Silicon N-Channel MOS (π-MOS) TK10A60D5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 90 ns (typ.) (2) Low drain-source on-r

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK10A60D5，ITK10A60D5 ·FEATURES ·Low drain-source on-resistance: RDS(on) = 0.8Ω (typ.) ·Enhancement mode: Vth = 2.5 to 4.5V (VDS = 10 V, ID=1.0mA)

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK10A60D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) • High forward transf