TK10A डाटा शीट PDF( Datasheet )

Topstek Current Transducer TK3A .. TK50A TK 3A~50A Features ♦ Highly reliable Hall Effect device ♦ Compact and light weight ♦ Fast response time ♦ Excellent linearity of the output voltage over a wide

TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A50D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) • High forward transfe

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK10A50D，ITK10A50D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.62Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK10A50W，ITK10A50W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.38Ω ·Easy to control Gate switching ·Enhancement mode: Vth = 2.7 to 3.7

MOSFETs Silicon N-Channel MOS (DTMOS) TK10A50W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure

TK10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A55D Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK10A55D，ITK10A55D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.56Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·