डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TK100A06N1 | MOSFETs TK100A06N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100A06N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) |
Toshiba Semiconductor |
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TK100A06N1 | N-Channel MOSFET INCHANGE Semiconductor
isc N-Channel MOSFET Transistor TK100A06N1,ITK100A06N1
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 2.7mΩ (typ.) (VGS = 10 V) ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 1 |
INCHANGE |
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